derrierloisirs.fr
» » SiGe Heterojunction Bipolar Transistors

Download SiGe Heterojunction Bipolar Transistors ePub

by Peter Ashburn

Download SiGe Heterojunction Bipolar Transistors ePub
  • ISBN 0470848383
  • ISBN13 978-0470848388
  • Language English
  • Author Peter Ashburn
  • Publisher Wiley; 1 edition (December 2, 2003)
  • Pages 288
  • Formats doc mbr doc lrf
  • Category Engineering
  • Subcategory Engineering
  • Size ePub 1679 kb
  • Size Fb2 1337 kb
  • Rating: 4.2
  • Votes: 640

SiGe HBTs is a hot topic within the microelectronics communitybecause of its applications potential within integrated circuitsoperating at radio frequencies. Applications range from high speedoptical networking to wireless communication devices.

The addition of germanium to silicon technologies to formsilicon germanium (SiGe) devices has created a revolution in thesemiconductor industry. These transistors form the enablingdevices in a wide range of products for wireless and wiredcommunications.

This book features:

SiGe products include chip sets for wireless cellular handsetsas well as WLAN and high-speed wired network applicationsDescribes the physics and technology of SiGe HBTs, withcoverage of Si and Ge bipolar transistorsWritten with the practising engineer in mind, this bookexplains the operating principles and applications of bipolartransistor technology.

Essential reading for practising microelectronics engineers andresearchers.Also, optical communications engineers and communicationtechnology engineers. An ideal reference tool for masters levelstudents in microelectronics and electronics engineering.


8 Silicon-Germanium Heterojunction Bipolar Transistors . Introduction . Bandgap Engineering . Collector Current, Base Current and Gain Enhancement . Cut-off Frequency . Device Design Trade-offs in a SiGe HBT . Graded Germanium Profiles . 1 Design Equations for a Graded Germanium Profile . Boron Diffusion in SiGe HBTs .

Download it once and read it on your Kindle device, PC, phones or tablets. Use features like bookmarks, note taking and highlighting while reading SiGe Heterojunction Bipolar Transistors.

SiGe Heterojunction Bipolar Transistors is an essentialtool for practising process engineers and integrated circuitdesigners in the semiconductor, optical communications and ns industries.

SiGe Heterojunction Bipolar Transistors Peter Ashburn University of Southampton, Southampton, UK SiGe . SiGe heterojunction bipolar transistors, Peter Ashburn. p. cm. Includes bibliographical references and index. ISBN 0-470-84838-3 1. Bipolar transistors.

SiGe heterojunction bipolar transistors, Peter Ashburn. Includes bibliographical references and index

SiGe heterojunction bipolar transistors, Peter Ashburn. The book concludes with coverage of overall bipolar technology optimization, which allows the transistor design, technology specification and circuit design to be optimized to give minimum ECL and CML gate delay. The book is intended primarily for practising engineers and scientists and for students at the masters and postgraduate level.

Double-mesa type SiGe heterojunction bipolar transistors (HBTs) have been improved by increasing the base Gummel number and by using a thin, highly doped launcher layer between the base and the collector. In addition, the contact resistance of the base contact has been reduced. Hence, it was possible to obtain a record maximum frequency of oscillation up to 160 GHz for a 2-emitter finger HBT in common emitter configuration.

Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. Download (pdf, . 0 Mb) Donate Read. Epub FB2 mobi txt RTF.

This book brings together for the first time all the new developments and describes in a unified manner the physics, materials science and technology of silicon bipolar transistors and SiGe HBTs. Featuring: Basic device physics concepts presented in a simple and concise way. All the key technology innovations in detail, including polysilicon emitters, selective implanted collectors, selective and differential SiGe(C) epitaxy, and technology case studies.

Applications range from high speed optical networking to wireless communication devices

Applications range from high speed optical networking to wireless communication devices.

The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz. It is commonly used in modern ultrafast circuits, mostly radio-frequency (RF) systems, and in applications requiring a high power efficiency, such as RF power amplifiers in cellular phones.